In Situ Selenization‐Engineered PtSe ₂ /PdSe ₂ Heterostructures for Short‐Wave Infrared Polarization‐Sensitive Photodetection and Information Transmission
View Full Paper
Ask AI
Bookmark
Share
Key Points
Achieves high photocurrent response with improved specificity in photodetectors across infrared ranges.
Peak responsivity reached 1.232 A W−1 at 532 nm under −2 V bias, indicating advanced sensitivity.
Laser direct-write lithography utilized for PdSe2 in novel thickness-engineered heterostructures led to a cutoff frequency of 16.6 kHz.
Interface optimization enhances device performance for polarization-resolved imaging and communication systems.
Discussion
No takes yet. Share an insight, caveat, or question.
Implication
Synergistic design enhances performance in infrared photodetectors, suggesting advances in optical communication systems.