October 11, 2025Physica Scripta

High-Sensitivity Metal-Oxide-Semiconductor Graphene-InP Hybrid Photodetector with Enhanced Near-Infrared Detection Capability

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Enhanced responsivity of 2.3 A W⁻¹ at 2 V reverse bias reflects significant sensitivity improvements.
Dark current is reduced to ~10⁻¹⁷ A, contributing to better performance in low-light conditions.
Numerical simulations predict a specific detectivity exceeding 2 × 10¹³ Jones, highlighting effective interface engineering.
The device enables spectral sensitivity control over a 1.3–1.6 µm NIR window, indicating versatility for various applications.

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Implication

Theoretical optimization improves responsivity and lowers dark current in a graphene-InP photodetector, indicating potential for advanced optical communication.

Cite This Study

Arash Vaghef-Koodehi (2025) studied this question.

synapsesocial.com/papers/68e9b1d0ba7d64b6fc132aad https://doi.org/10.1088/1402-4896/ae1171

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Implication

Theoretical optimization improves responsivity and lowers dark current in a graphene-InP photodetector, indicating potential for advanced optical communication.

High-Sensitivity Metal-Oxide-Semiconductor Graphene-InP Hybrid Photodetector with Enhanced Near-Infrared Detection Capability

Key Points

Discussion

Implication

Cite This Study

High-Sensitivity Metal-Oxide-Semiconductor Graphene-InP Hybrid Photodetector with Enhanced Near-Infrared Detection Capability

Key Points

Discussion

Implication

Cite This Study

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