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August 18, 2025Advanced Materials

Subnanosecond Field‐Free Switching of a Wafer‐Scalable van der Waals Ferromagnet at Room Temperature

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ADAo DuWXWeiran XieTNTianxiao Nie

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Overview

Demonstrates ultrafast, field-free switching in van der Waals ferromagnets, suggesting advances in memory technology.

Key Points

  • Subnanosecond field-free switching is achieved in a van der Waals ferromagnet at room temperature, enhancing spintronic applications.
  • Notably, the introduction of a variable concentration gradient of Fe supports both in-plane and perpendicular magnetic anisotropy.
  • Epitaxial growth engineering is employed to create the Fe3GaTe2/Pt heterostructure, crucial for fast memory systems.
  • Research highlights the potential for integrating 2D materials into advanced spintronic devices and faster memory technologies.

Cite This Study

Du et al. (2025) studied this question.

synapsesocial.com/papers/68af2ef6cf1dd9ea359e71cehttps://doi.org/10.1002/adma.202505190
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